? 2006 ixys all rights reserved ds99511e(03/06) polarhv tm hiperfet power mosfet v dss = 800 v i d25 =20a r ds(on) 520 m ? ? ? ? ? t rr 250 ns n-channel enhancement mode avalanche rated fast intrinsic diode features l international standard packages l fast recovery diode l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c20a i dm t c = 25 c, pulse width limited by t jm 50 a i ar t c = 25 c10a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic case for 10 s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. f c mounting force (plus220) 1..65 / 2.5..15 n/lb weight to-247 6 g to-268 5.5 g plus220 types 4 g g = gate d = drain s = source tab = drain ixfh 20n80p ixft 20n80p ixfv 20n80p ixfv 20n80ps to-247 (ixfh) (tab) to-268 (ixft) g s d (tab) g s d plus220 (ixfv) plus220 smd(ixfv..s) d (tab) d (tab) g s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = 10 a 520 m ? pulse test, t 300 s, duty cycle d 2 %
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 20n80p ixft 20n80p ixfv 20n80p ixfv 20n80ps symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 10 a, pulse test 14 23 s c iss 4685 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 356 pf c rss 26 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 10 a 24 ns t d(off) r g = 2 ? (external) 85 n s t f 24 ns q g(on) 86 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 10 a 27 nc q gd 24 nc r thjc 0.25 c/w r thcs (to-247, plus220) 0.21 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 20 a i sm repetitive 50 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 250 ns q rm v r = 100v; v gs = 0 v 0.8 c i rm 6.0 a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 36 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10121416182022 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 024681012 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on ) norm alize d to i d = 10a value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 20a i d = 10a v gs = 10v fig. 6. drain current vs. case tem perature 0 2 4 6 8 10 12 14 16 18 20 22 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alize d to i d = 10a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 5 10 15 20 25 30 35 40 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v ixfh 20n80p ixft 20n80p ixfv 20n80p ixfv 20n80ps
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 20n80p ixft 20n80p ixfv 20n80p ixfv 20n80ps fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090 q g - nanocoulombs v g s - volts v ds = 400v i d = 10a i g = 10ma fig. 7. input adm ittance 0 4 8 12 16 20 24 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 5.75 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. m axim um transient therm al resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
? 2006 ixys all rights reserved to-247ad (ixfh) outline 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixft) outline package outline drawings plus220 (ixfv) outline plus220smd (ixfv_s) outline ixys ref: f_20n80p (7j) 03-01-06-a.xls ixfh 20n80p ixft 20n80p ixfv 20n80p ixfv 20n80ps
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